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| geometry process details principal device types cmlsh1-40 cxsh-4 ctlsh1-40m832d gross die per 5 inch wafer 16,276 process CPD76X schottky diode 1 amp schottky diode chip process epitaxial planar die size 32 x 32 mils die thickness 5.9 mils anode bonding pad area 27 x 27 mils top side metalization al - 20,000? back side metalization au - 12,000? www.centralsemi.com r2 (22-march 2010) http://
process CPD76X typical electrical characteristics www.centralsemi.com r2 (22-march 2010) http:// |
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